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FDN537N PDF预览

FDN537N

更新时间: 2024-09-28 11:15:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 335K
描述
N 沟道,PowerTrench® MOSFET,30V,6.5A,23mΩ

FDN537N 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – Single, N-Channel,  
POWERTRENCH)  
V
R
MAX  
I MAX  
D
DS  
DS(ON)  
30 V  
23 mW @ 10 V  
36 mW @ 4.5 V  
6.5 A  
30 V, 6.5 A, 23 mW  
FDN537N  
D
General Description  
G
S
This NChannel MOSFET is produced using onsemi advanced  
®
POWERTRENCH process that has been optimized for r  
,
DS(on)  
SOT23/SUPERSOTt23, 3 LEAD, 1.4x2.9  
switching performance and ruggedness.  
CASE 527AG  
Features  
Max r  
Max r  
= 23 mW @ V = 10 V, I = 6.5 A  
GS D  
DS(on)  
DS(on)  
MARKING DIAGRAM  
= 36 mW @ V = 4.5 V, I = 6.0 A  
GS  
D
High Performance Trench Technology for Extremely Low r  
DS(on)  
537MG  
High Power and Current Handling Capability in a Widely Used  
Surface Mount Package  
G
Fast Switching Speed  
537 = Specific Device Code  
100% UIL Tested  
M
= Month Code  
This Device is PbFree and is RoHS Compliant  
G
= PbFree Package  
(Note: Microdot may be in either location)  
Application  
Primary DCDC Switch  
PIN ASSIGNMENT  
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)  
A
Symbol  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage (Note 3)  
Value  
30  
Unit  
V
D
V
DS  
V
GS  
20  
V
I
D
Drain Current  
Continuous (Package  
8.0  
A
limited) T = 25°C  
C
Continuous (Note 1a)  
A
6.5  
G
S
T = 25°C  
Pulsed  
25  
1.5  
P
D
Power Dissipation  
(Note 1a)  
(Note 1b)  
W
0.6  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
T , T  
Operating and Storage Junction  
Temperature Range  
55 to 150  
°C  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)  
A
Symbol  
Parameter  
Max  
Unit  
R
Thermal Resistance, JunctiontoAmbient  
(Note 1a)  
80  
°C/W  
q
JA  
Thermal Resistance, JunctiontoAmbient  
(Note 1b)  
180  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
January, 2023 Rev. 2  
FDN537N/D  

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