FDN361BN-G

更新时间： 2024-09-26 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	947K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDN361BN-G 数据手册

April 1999

FDN361AN

N-Channel, Logic Level, PowerTrench^ΤΜ

Features

General Description

This N-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's PowerTrench process that has

been especially tailored to minimize the on-state resistance

and yet maintain low gate charge for superior switching

performance.

• 1.8 A, 30 V. R_DS(on)= 0.100 Ω @ V_GS= 10 V

R_DS(on)= 0.150 Ω @ V_GS= 4.5 V.

• Low gate charge ( 2.1nC typical ).

• Fast switching speed.

• High performance trench technology for extremely

Applications

low R_DS(on)

• DC/DC converter

• Load switch

• Motor drives

• High power version of industry standard SOT-23

package. Identical pin out to SOT-23 with

30% higher power handling capability.

SuperSOT^TM-3

T_A=25^oC unless otherwise noted

Absolute Maximum Ratings

Symbol

Parameter

FDN361AN

Units

V_DSS

Drain-Source Voltage

Gate-Source Voltage - Continuous

Drain Current - Continuous

- Pulsed

V_GSS

I_D

(Note 1a)

1.8

P_D

Power Dissipation for Single Operation

0.5

(Note 1b)

0.46

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T

stg

Thermal Characteristics

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Ambient

250

C/W

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

361

FDN361AN

7’’

8mm

3000 units

1998 Fairchild Semiconductor Corporation

FDN361AN, Rev. C

12 3 4 5 6 7 8

中文翻译

下载PDF

与FDN361BN-G相关器件

型号	品牌	获取价格	描述	数据表
FDN363N	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Meta
FDN363N	ROCHESTER	获取价格	1A, 100V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, SUPERSOT-3
FDN371N	FAIRCHILD	获取价格	20V N-Channel PowerTrench MOSFET
FDN371N	TYSEMI	获取价格	SuperSOT -3
FDN371ND87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
FDN372S	TYSEMI	获取价格	SuperSOT -3
FDN372S	FAIRCHILD	获取价格	30V N-Channel PowerTrench剖 SyncFET
FDN372S_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 2.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
FDN372S-F095	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDN537N	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，30V，6.5A，23mΩ