Datasheet > FDN5630-NB5N008A

FDN5630-NB5N008A

更新时间： 2024-09-27 21:13:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	91K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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FDN5630-NB5N008A 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	1.7 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.5 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

FDN5630-NB5N008A 数据手册

March 2000

FDN5630

60V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers.

• 1.7 A, 60 V. R_DS(ON)= 0.100 Ω @ V_GS= 10 V

R_DS(ON)= 0.120 Ω @ V_GS= 6 V.

• Optimized for use in high frequency DC/DC converters.

• Low gate charge.

This MOSFET features very low R_DS(ON)in a small SOT23

footprint. Fairchild’s PowerTrench technology provides

faster switching than other MOSFETs with comparable

R_DS(ON)specifications. The result is higher overall

efficiency with less board space.

• Very fast switching.

• SuperSOT^TM- 3 provides low R_DS(ON)in SOT23 footprint.

Applications

• DC/DC converter

• Motor drives

SuperSOT^TM-3

Absolute Maximum Ratings T_A= 25 C unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

(Note 1a)

Drain Current - Continuous

- Pulsed

1.7

(Note 1a)

(Note 1b)

P_D

Power Dissipation for Single Operation

0.5

0.46

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Ambient

250

R_θ_JA

C/W

Thermal Resistance, Junction-to-Case

R_θ_JC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

5630

FDN5630

8mm

3000 units

2000 Fairchild Semiconductor Corporation

FDN5630 Rev. C

12 3 4 5

中文翻译

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