Datasheet > FDN5630

FDN5630

更新时间： 2024-11-12 10:32:19

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	107K
描述
N-Channel PowerTrench MOSFET

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中文翻译

获取价格

数据手册

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FDN5630 数据手册

SMD Type

MOSFET

N-Channel PowerTrench MOSFET

FDN5630

SOT-23

■ Features

● VDS (V) = 60V

Unit: mm

+0.1

2.9_-0.1

+0.1

0.4_-0.1

● RDS(ON)＜100 mΩ (VGS = 10V)

● RDS(ON)＜120 mΩ (VGS = 6V)

● Optimized for use in high frequency DC/DC converters

● Low gate charge

+0.1

+0.05

0.95_-0.1

0.1_-0.01

+0.1

1.9_-0.1

● Very fast switching

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

VDS

Rating

Unit

Gate-to-source voltage

Drain curent -Continuous

-Pulsed

VGS

±20

1.7

Power dissipation

0.5

Maximum Junction-to-Ambient

Junction and storage temperature range

RθJA

250

℃/W

TJ,TSTG

-55 to +150

℃

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