生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.35 | 雪崩能效等级(Eas): | 8.5 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 0.24 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDN371N | FAIRCHILD |
获取价格 |
20V N-Channel PowerTrench MOSFET | |
FDN371N | TYSEMI |
获取价格 |
SuperSOT -3 | |
FDN371ND87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
FDN372S | TYSEMI |
获取价格 |
SuperSOT -3 | |
FDN372S | FAIRCHILD |
获取价格 |
30V N-Channel PowerTrench剖 SyncFET | |
FDN372S_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
FDN372S-F095 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDN537N | ONSEMI |
获取价格 |
N 沟道,PowerTrench® MOSFET,30V,6.5A,23mΩ | |
FDN5618 | FAIRCHILD |
获取价格 |
60V P-Channel Logic Level PowerTrench MOSFET | |
FDN5618P | ONSEMI |
获取价格 |
60V,P 沟道,PowerTrench® MOSFET,-1.25A,170mΩ |