生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.75 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏源导通电阻: | 0.17 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDN5618P_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Me |
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FDN5618PD87Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Me |
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FDN5618PT/R_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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FDN5630 | TYSEMI |
获取价格 |
VDS (V) = 60V RDS(ON)100 m (VGS = 10V) Optimized for use in high frequency DC/DC converter |
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FDN5630 | KEXIN |
获取价格 |
N-Channel PowerTrench MOSFET |
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FDN5630 | FAIRCHILD |
获取价格 |
60V N-Channel PowerTrench MOSFET |
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FDN5630 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,60V,1.7A,100mΩ |
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FDN5630 | UMW |
获取价格 |
种类:N-Channel;漏源电压(Vdss):60V;持续漏极电流(Id)(在25°C时 |
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FDN5630 (KDN5630) | KEXIN |
获取价格 |
N-Channel MOSFET |
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FDN5630_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal |
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