Datasheet > FDN360P-NBGT003B

FDN360P-NBGT003B

更新时间： 2024-02-27 14:01:37

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	122K
描述
Transistor

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中文翻译

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技术参数
数据手册

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FDN360P-NBGT003B 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	2 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	湿度敏感等级：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	0.5 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

FDN360P-NBGT003B 数据手册

May 2003

FDN360P

Single P-Channel, PowerTrench^ÒMOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor advanced Power Trench

process that has been especially tailored to minimize

the on-state resistance and yet maintain low gate

charge for superior switching performance.

–2 A, –30 V. R_DS(ON)= 80 mW @ V_GS= –10 V

R_DS(ON)= 125 mW @ V_GS= –4.5 V

Low gate charge (6.2 nC typical)

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

High performance trench technology for extremely

low R_DS(ON)

High power version of industry Standard SOT-23

package. Identical pin-out to SOT-23 with 30%

higher power handling capability.

SuperSOT^TM-3

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–30

V_GSS

Gate-Source Voltage

±20

–2

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

–10

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.5

P_D

0.46

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

°C/W

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

250

R_qJA

Thermal Resistance, Junction-to-Case

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

360

FDN360P

7’’

8mm

3000 units

FDN360P Rev F1 (W)

Ó2003 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

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与FDN360P-NBGT003B相关器件

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FDN361AN	FAIRCHILD	获取价格	N-Channel, Logic Level, PowerTrenchビヌ
FDN361AN	TYSEMI	获取价格	SuperSOT-3
FDN361BN	FAIRCHILD	获取价格	30V N-Channel, Logic Level, PowerTrench MOSFET
FDN361BN	ONSEMI	获取价格	N 沟道，逻辑电平，PowerTrench® MOSFET，30V，1.4A，110mΩ
FDN361BN	TYSEMI	获取价格	SuperSOT-3
FDN361BN	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
FDN361BN-G	FAIRCHILD	获取价格	暂无描述
FDN363N	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Meta
FDN363N	ROCHESTER	获取价格	1A, 100V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, SUPERSOT-3