Datasheet > FDN360P (KDN360P)

FDN360P (KDN360P)

更新时间： 2024-11-13 18:09:19

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	125K
描述
P-Channel MOSFET

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中文翻译

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数据手册

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FDN360P (KDN360P) 数据手册

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SMD Type

MOSFET

Transistors

P-Channel MOSFET

FDN360P ^(KDN360P)

SOT-23

Unit : mm

+0.1

2.9 _-0.1

+0.1

0.4 _-0.1

Ƶ Features

ƽ VDS (V) = -30 V

= -2 A

DS(ON) = 0.080 ȍ @ VGS = -10 V

DS(ON) = 0.125 ȍ @ VGS = -4.5 V

+0.1

+0.05

0.95 _-0.1

1.9 _-0.1

0.1 _-0.01

+0.1

1. Gate

2. Source

3. Drain

Ƶ Absolute Maximum Ratings

= 25ć unless otherwise noted

Parameter

Symbol

Rating

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

VDS

-2

-20

(Note 1a)

(Note 1b)

0.5

Power Dissipation

0.46

250

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

(Note 1a)

(Note 1)

thJA

thJC

ć/W

150

Storage Temperature Range

Notes:

Tstg

-55 to 150

1. RșJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is

defined as the solder mounting surface of the drain pins. RșJC is guaranteed by design while RșCA is determined by

the user's board design.

a. 250ć/W when mounted on a 0.02 in²pad of 2oz Cu.

c. 270ć/W when mounted on a 0.001in²pad of 2oz Cu.

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