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FDN360 PDF预览

FDN360

更新时间: 2024-11-11 22:29:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 233K
描述
Single P-Channel PowerTrenchTM MOSFET

FDN360 数据手册

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February 1999  
FDN360P  
Single P-Channel PowerTrenchTM MOSFET  
General Description  
Features  
This P-Channel Logic Level MOSFET is produced using  
Fairchild Semiconductor's advanced PowerTrench process  
that has been especially tailored to minimize on-state  
resistance and yet maintain superior switching  
performance.  
-2 A, -30 V. RDS(on) = 0.080 @ VGS = -10 V  
RDS(on) = 0.125 @ VGS = -4.5 V.  
Low gate charge (5nC typical).  
These devices are well suited for low voltage and battery  
powered applications where low in-line power loss and  
fast switching are required.  
Fast switching speed.  
High performance trench technology for extremely  
low RDS(ON)  
.
Applications  
High power and current handling capability.  
DC/DC converter  
Load switch  
Motor drives  
D
D
S
S
G
SuperSOTTM-3  
G
TA = 25°C unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
-30  
V
V
A
20  
±
(Note 1a)  
(Note 1a)  
-2  
-20  
PD  
Power Dissipation for Single Operation  
0.5  
W
(Note 1b)  
0.46  
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
Thermal Characteristics  
θ
(Note 1a)  
(Note 1)  
R
R
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
250  
75  
C/W  
C/W  
JA  
°
°
JC  
θ
Package Outlines and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
360  
FDN360P  
7’’  
8mm  
3000 units  
1999 Fairchild Semiconductor Corporation  
FDN360P Rev. D  

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