Datasheet > FDN359AN

FDN359AN

更新时间： 2024-11-13 17:15:11

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	411K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:2.7A;Vgs(th)(V):±20;漏源导通电阻:46mΩ@10V;漏源导通电阻:60mΩ@4.5V

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FDN359AN 数据手册

FDN359A

N-Channel 30 V (D-S) MOSFET

UMW

General Description

SOT–23

This N-Channel Logic Level MOSFET is produced

using advanced PowerTrench process that has been

especially tailored to minimize on-state resistance

and yet maintain superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

1. GATE

2. SOURCE

3. DRAIN

VDS (V) = 27V

RDS(ON)

46m

60m

(VGS

= 10V)

(VGS = 4.5V)

Absolute Maximum Ratings T_A= 25^oC unless other wise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

Maximum Drain Current - Continuous

- Pulsed

±20

(Note 1a)

2.7

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.5

0.46

-55 to 150

T_J,T_STG

Operating and Storage Temperature Range

°C

THERMAL CHARACTERISTICS

R_q_JA

R_q_JC

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

250

°C/W

(Note 1)

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

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与FDN359AN相关器件

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FDN359AN-F095	FAIRCHILD	获取价格	Transistor
FDN359BN	TYSEMI	获取价格	SuperSOT-3
FDN359BN	FAIRCHILD	获取价格	N-Channel Logic Level PowerTrench TM MOSFET
FDN359BN	ONSEMI	获取价格	N 沟道逻辑电平 PowerTrench® MOSFET 30V，2.7A，46mΩ
FDN359BN	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
FDN359BN-F095	FAIRCHILD	获取价格	N-Channel Logic Level PowerTrenchTM MOSFET
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