Datasheet > FDN358PL99Z

FDN358PL99Z

更新时间： 2024-01-23 17:36:30

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关光电二极管晶体管
页数	文件大小	规格书
5页	72K
描述
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

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技术参数
数据手册

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FDN358PL99Z 技术参数

生命周期：	Obsolete	零件包装代码：	SOT
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.37	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	1.5 A
最大漏源导通电阻：	0.125 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	P-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FDN358PL99Z 数据手册

October 2001

FDN358P

Single P-Channel, Logic Level, PowerTrench^ÒMOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor advanced Power Trench

process that has been especially tailored to minimize

the on-state resistance and yet maintain low gate

charge for superior sw itching performance.

· –1.5 A, –30 V.R_DS(ON)= 125 mW @ V_GS= –10 V

R_DS(ON)= 200 mW @ V_GS= –4.5 V

· Low gate charge (4 nC typical)

These devices are well suited for portable electronics

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

· High performance trench technology for extremely

low R_DS(ON)

· High power version of industry Standard SOT-23

package. Identical pin-out to SOT-23 with 30%

higher power handling capability.

SuperSOT^TM-3

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–30

V_GSS

I_D

Gate-Source Voltage

±25

–1.5

Drain Current – Continuous

– Pulsed

(Note 1a)

–5

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.5

0.46

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

°C/W

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

250

R_qJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

358

FDN358P

7’’

8mm

3000 units

Ó2001 Fairchild Semiconductor Corporation

FDN358P Rev E1 (W)

12 3 4 5

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