是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SSOT |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 3.9 |
Samacsys Confidence: | 3 | Samacsys Status: | Released |
Samacsys PartID: | 167139 | Samacsys Pin Count: | 3 |
Samacsys Part Category: | Integrated Circuit | Samacsys Package Category: | SOT23 (3-Pin) |
Samacsys Footprint Name: | SSOT-3L | Samacsys Released Date: | 2015-04-13 16:43:19 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 1.9 A | 最大漏极电流 (ID): | 1.9 A |
最大漏源导通电阻: | 0.06 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.5 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FDN357N | ONSEMI |
功能相似 |
N 沟道,逻辑电平增强型场效应晶体管,30V,1.9A,90mΩ | |
BSH108,215 | NXP |
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N-channel TrenchMOS logic level FET TO-236 3-Pin | |
IRLML0030TRPBF | INFINEON |
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HEXFET Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDN357N_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
FDN357ND87Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
FDN357NL99Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
FDN357NS62Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 1.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
FDN358 | FAIRCHILD |
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P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
FDN358P | FAIRCHILD |
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P-Channel Logic Level Enhancement Mode Field Effect Transistor | |
FDN358P | TYSEMI |
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SuperSOT-3 | |
FDN358P | ONSEMI |
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单 P 沟道,逻辑电平,PowerTrench® MOSFET,-30V,-1.5A,12 | |
FDN358P | UMW |
获取价格 |
种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C | |
FDN358P_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal |