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FDMC8360L PDF预览

FDMC8360L

更新时间: 2024-02-17 10:36:57
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 栅极
页数 文件大小 规格书
7页 344K
描述
N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m

FDMC8360L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:QFN
包装说明:ROHS COMPLIANT, POWER 33, 8 PIN针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.73
雪崩能效等级(Eas):294 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):27 A
最大漏源导通电阻:0.0021 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-240BAJESD-30 代码:S-PDSO-N5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):54 W
最大脉冲漏极电流 (IDM):240 A子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMC8360L 数据手册

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TRADEMARKS  
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®*  
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tm  
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®
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®
®
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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications  
may change in any manner without notice.  
Advance Information  
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Datasheet contains preliminary data; supplementary data will be published at a later  
date. Fairchild Semiconductor reserves the right to make changes at any time without  
notice to improve design.  
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to  
make changes at any time without notice to improve the design.  
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Obsolete  
Full Production  
Datasheet contains specifications on a product that is discontinued by Fairchild  
Semiconductor. The datasheet is for reference information only.  
Not In Production  
Rev. I64  
©2013 Fairchild Semiconductor Corporation  
FDMC8360L Rev. C1  
7
www.fairchildsemi.com  

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