5秒后页面跳转
FDMC8321LDC PDF预览

FDMC8321LDC

更新时间: 2024-02-25 09:25:40
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 660K
描述
N 沟道,Power Trench® MOSFET,40V,108A,2.5mΩ

FDMC8321LDC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:QFN
包装说明:,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.75
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FDMC8321LDC 数据手册

 浏览型号FDMC8321LDC的Datasheet PDF文件第1页浏览型号FDMC8321LDC的Datasheet PDF文件第3页浏览型号FDMC8321LDC的Datasheet PDF文件第4页浏览型号FDMC8321LDC的Datasheet PDF文件第5页浏览型号FDMC8321LDC的Datasheet PDF文件第6页浏览型号FDMC8321LDC的Datasheet PDF文件第7页 
FDMC8321LDC  
N-Channel Dual CoolTM 33 PowerTrench® MOSFET  
40 V, 108 A, 2.5 mΩ  
General Description  
Features  
This N-Channel MOSFET is produced using ON  
„ Dual CoolTM Top Side Cooling PQFN package  
„ Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 27 A  
„ Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 21 A  
„ High performance technology for extremely low rDS(on)  
„ RoHS Compliant  
Semiconductor’s  
advanced  
PowerTrench®  
process.  
Advancements in both silicon and Dual CoolTM package  
technologies have been combined to offer the lowest rDS(on)  
while maintaining excellent switching performance by extremely  
low Junction-to-Ambient thermal resistance.  
Applications  
„ Primary DC-DC Switch  
„ Motor Bridge Switch  
„ Synchronous Rectifier  
G
Pin 1  
S
S
S
S
D
D
D
D
S
S
G
D
D
D
D
Dual CoolTM 33  
Top  
Bottom  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
40  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±20  
Drain Current  
-Continuous  
TC = 25 °C  
TA = 25 °C  
108  
ID  
-Continuous  
-Pulsed  
(Note 1a)  
(Note 4)  
(Note 3)  
27  
A
320  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
181  
mJ  
W
TC = 25 °C  
TA = 25 °C  
56  
PD  
Power Dissipation  
(Note 1a)  
2.9  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
(Note 1)  
2.2  
42  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Dual CoolTM 33  
Reel Size  
13 ’’  
Tape Width  
12 mm  
Quantity  
8321LD  
FDMC8321LDC  
3000 units  
©2014 Semiconductor Components Industries, LLC.  
August-2017, Rev.2  
Publication Order Number:  
FDMC8321LDC/D  
1

与FDMC8321LDC相关器件

型号 品牌 描述 获取价格 数据表
FDMC8327L FAIRCHILD N-Channel PowerTrench® MOSFET 40 V, 14 A, 9.

获取价格

FDMC8327L ONSEMI N 沟道,Power Trench® MOSFET,40V,14A,9.7mΩ

获取价格

FDMC8360L FAIRCHILD N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 m

获取价格

FDMC8360L ONSEMI N 沟道屏蔽门极 Power Trench® MOSFET 40V,80A,2.1mΩ

获取价格

FDMC8360LET40 ONSEMI N 沟道屏蔽门极 Power Trench® MOSFET 40V,141A,2.1mΩ

获取价格

FDMC8462 FAIRCHILD N-Channel Power Trench㈢ MOSFET 40V, 20A, 5.8

获取价格