FDMC8321LDC
N-Channel Dual CoolTM 33 PowerTrench® MOSFET
40 V, 108 A, 2.5 mΩ
General Description
Features
This N-Channel MOSFET is produced using ON
Dual CoolTM Top Side Cooling PQFN package
Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 27 A
Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 21 A
High performance technology for extremely low rDS(on)
RoHS Compliant
Semiconductor’s
advanced
PowerTrench®
process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
Primary DC-DC Switch
Motor Bridge Switch
Synchronous Rectifier
G
Pin 1
S
S
S
S
D
D
D
D
S
S
G
D
D
D
D
Dual CoolTM 33
Top
Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
Drain Current
-Continuous
TC = 25 °C
TA = 25 °C
108
ID
-Continuous
-Pulsed
(Note 1a)
(Note 4)
(Note 3)
27
A
320
EAS
Single Pulse Avalanche Energy
Power Dissipation
181
mJ
W
TC = 25 °C
TA = 25 °C
56
PD
Power Dissipation
(Note 1a)
2.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
2.2
42
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Dual CoolTM 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
8321LD
FDMC8321LDC
3000 units
©2014 Semiconductor Components Industries, LLC.
August-2017, Rev.2
Publication Order Number:
FDMC8321LDC/D
1