5秒后页面跳转
FDMC7672 PDF预览

FDMC7672

更新时间: 2024-11-21 11:10:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 284K
描述
30V N沟道PowerTrench® MOSFET

FDMC7672 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-N5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.99
Is Samacsys:N其他特性:ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):144 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):20 A最大漏极电流 (ID):16.9 A
最大漏源导通电阻:0.0057 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-N5JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.3 W
最大脉冲漏极电流 (IDM):50 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDMC7672 数据手册

 浏览型号FDMC7672的Datasheet PDF文件第2页浏览型号FDMC7672的Datasheet PDF文件第3页浏览型号FDMC7672的Datasheet PDF文件第4页浏览型号FDMC7672的Datasheet PDF文件第5页浏览型号FDMC7672的Datasheet PDF文件第6页浏览型号FDMC7672的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel,  
POWERTRENCH)  
V
R
MAX  
I MAX  
D
DS  
DS(ON)  
30 V  
5.7 mW @ 10 V  
7.0 mW @ 4.5 V  
16.9 A  
30 V, 16.9 A, 5.7 mW  
FDMC7672  
General Description  
This NChannel MOSFET is produced using onsemi’s advanced  
POWERTRENCH process that has been especially tailored  
to minimize the onstate resistance. This device is well suited  
for Power Management and load switching applications common  
in Notebook Computers and Portable Battery Packs.  
D
S
8
1
2
3
S
S
7
6
D
D
G
4
5
D
S
N-CHANNEL MOSFET  
Features  
Max R  
Max R  
= 5.7 mW at V = 10 V, I = 16.9 A  
GS D  
= 7.0 mW at V = 4.5 V, I = 15.0 A  
DS(on)  
Pin 1  
S
DS(on)  
GS  
D
High Performance Technology for Extremely Low R  
PbFree, Halide Free and RoHS Compliant  
S
DS(on)  
G
D
D
D
D
Applications  
Top  
Bottom  
DCDC Buck Converters  
Notebook Battery Power Management  
Load Switch in Notebook  
WDFN8 3.3 y 3.3, 0.65P  
CASE 511DH  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current:  
Value  
30  
Unit  
V
Pin 1 Dot  
FDMC  
V
DS  
V
GS  
7672  
ALYW  
G
20  
V
I
D
A
Continuous, T = 25°C  
20  
16.9  
50  
C
Continuous, T = 25°C (Note 1a)  
A
Pulsed  
FDMC7672 = Specific Device Code  
A
L
YW  
G
= Assembly Site  
E
Single Pulse Avalanche Energy  
(Note 3)  
144  
mJ  
W
AS  
= Wafer Lot Number  
= Assembly Start Week  
= PbFree Package  
P
Power Dissipation:  
D
T
A
= 25°C  
33  
2.3  
C
T = 25°C (Note 1a)  
T , T  
Operating and Storage Junction  
Temperature Range  
55 to +150  
°C  
ORDERING INFORMATION  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Device  
FDMC7672  
Package  
Shipping  
3000 /  
Tape & Reel  
WDFN8  
(PbFree,  
Halide Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
March, 2023 Rev. 3  
FDMC7672/D  

与FDMC7672相关器件

型号 品牌 获取价格 描述 数据表
FDMC7672S FAIRCHILD

获取价格

Power Field-Effect Transistor, 14.8A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, M
FDMC7672S ONSEMI

获取价格

N 沟道,Power Trench® SyncFET™,30V,14.8A,6.0mΩ
FDMC7672S-F125 FAIRCHILD

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDMC7672S-F127 FAIRCHILD

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDMC7678 FAIRCHILD

获取价格

Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon,
FDMC7678 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,30V,19.5A,5.3mΩ
FDMC7680 FAIRCHILD

获取价格

N-Channel Power Trench® MOSFET 30 V, 14.8 A,
FDMC7680 ONSEMI

获取价格

N 沟道,Power Trench® MOSFET,30V,14.8A,7.2mΩ
FDMC7692 FAIRCHILD

获取价格

N-Channel Power Trench® MOSFET 30 V, 13.3 A,
FDMC7692 ONSEMI

获取价格

N 沟道 PowerTrench® MOSFET 30V,13.3A,8.5mΩ