是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, S-PDSO-N5 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 0.99 |
Is Samacsys: | N | 其他特性: | ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas): | 144 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 20 A | 最大漏极电流 (ID): | 16.9 A |
最大漏源导通电阻: | 0.0057 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | S-PDSO-N5 | JESD-609代码: | e4 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2.3 W |
最大脉冲漏极电流 (IDM): | 50 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDMC7672S | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 14.8A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, M | |
FDMC7672S | ONSEMI |
获取价格 |
N 沟道,Power Trench® SyncFET™,30V,14.8A,6.0mΩ | |
FDMC7672S-F125 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDMC7672S-F127 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDMC7678 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, | |
FDMC7678 | ONSEMI |
获取价格 |
N 沟道,PowerTrench® MOSFET,30V,19.5A,5.3mΩ | |
FDMC7680 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 30 V, 14.8 A, | |
FDMC7680 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,30V,14.8A,7.2mΩ | |
FDMC7692 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 30 V, 13.3 A, | |
FDMC7692 | ONSEMI |
获取价格 |
N 沟道 PowerTrench® MOSFET 30V,13.3A,8.5mΩ |