是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, S-PDSO-N5 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 23 weeks | 风险等级: | 1.53 |
其他特性: | ULTRA-LOW RESISTANCE | 雪崩能效等级(Eas): | 54 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 19.5 A |
最大漏极电流 (ID): | 17.5 A | 最大漏源导通电阻: | 0.0053 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | MO-240BA |
JESD-30 代码: | S-PDSO-N5 | JESD-609代码: | e4 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 31 W | 最大脉冲漏极电流 (IDM): | 70 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | NO LEAD | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDMC7680 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 30 V, 14.8 A, |
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FDMC7680 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,30V,14.8A,7.2mΩ |
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FDMC7692 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 30 V, 13.3 A, |
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FDMC7692 | ONSEMI |
获取价格 |
N 沟道 PowerTrench® MOSFET 30V,13.3A,8.5mΩ |
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FDMC7692_10 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET |
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FDMC7692S | FAIRCHILD |
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N-Channel Power Trench? SyncFETTM |
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FDMC7692S | ONSEMI |
获取价格 |
N 沟道,Power Trench® SyncFET™,30V,18A,9.3mΩ |
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FDMC7692S-F125 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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FDMC7692S-F126 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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FDMC7692S-F127 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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