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FDMC7664

更新时间: 2024-11-06 06:59:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
7页 247K
描述
N-Channel PowerTrench® MOSFET 30 V, 18.8 A, 4.2 m

FDMC7664 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:MLP
包装说明:SMALL OUTLINE, S-PDSO-N5针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.71
Is Samacsys:N其他特性:ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):188 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):24 A最大漏极电流 (ID):18.8 A
最大漏源导通电阻:0.0042 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-N5JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.3 W最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDMC7664 数据手册

 浏览型号FDMC7664的Datasheet PDF文件第2页浏览型号FDMC7664的Datasheet PDF文件第3页浏览型号FDMC7664的Datasheet PDF文件第4页浏览型号FDMC7664的Datasheet PDF文件第5页浏览型号FDMC7664的Datasheet PDF文件第6页浏览型号FDMC7664的Datasheet PDF文件第7页 
July 2009  
FDMC7664  
N-Channel PowerTrench® MOSFET  
30 V, 18.8 A, 4.2 m  
Features  
General Description  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced Power Trench® process that has  
been especially tailored to minimize the on-state resistance. This  
device is well suited for Power Management and load switching  
applications common in Notebook Computers and Portable  
Battery Packs.  
  Max rDS(on) = 4.2 mat VGS = 10 V, ID = 18.8 A  
  Max rDS(on) = 5.5 mat VGS = 4.5 V, ID = 16.1 A  
  High performance technology for extremely low rDS(on)  
  Termination is Lead-free and RoHS Compliant  
Applications  
  DC - DC Buck Converters  
  Notebook battery power management  
  Load switch in Notebook  
Top  
Bottom  
4
3
2
1
G
S
S
S
D
D
D
5
6
7
8
Pin 1  
G
S
S
S
D
D
D
D
D
MLP 3.3x3.3  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
V
V
Drain to Source Voltage  
Gate to Source Voltage  
30  
20  
Drain Current -Continuous (Package limited) TC = 25 °C  
24  
ID  
-Continuous  
-Pulsed  
TA = 25 °C  
(Note 1a)  
18.8  
60  
A
EAS  
PD  
Single Pulse Avalanche Energy  
Power Dissipation  
(Note 3)  
(Note 1a)  
188  
2.3  
mJ  
W
TA = 25 °C  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RJA  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
53  
°C/W  
Package Marking and Ordering Information  
Device Marking  
FDMC7664  
Device  
FDMC7664  
Package  
MLP 3.3x3.3  
Reel Size  
13 ’’  
Tape Width  
12 mm  
Quantity  
3000 units  
©2009 Fairchild Semiconductor Corporation  
FDMC7664 Rev.B  
www.fairchildsemi.com  
1

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