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FDG313N PDF预览

FDG313N

更新时间: 2024-11-05 22:31:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 714K
描述
Digital FET, N-Channel

FDG313N 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.31
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (Abs) (ID):0.65 A最大漏极电流 (ID):0.95 A
最大漏源导通电阻:0.45 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDG313N 数据手册

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July 2000  
FDG313N  
Digital FET, N-Channel  
General Description  
Features  
This N-Channel enhancement mode field effect  
transistor is produced using Fairchild's proprietary, high  
cell density, DMOS technology. This very high density  
process is especially tailored to minimize on-state  
resistance. This device has been designed especially  
for low voltage applications as a replacement for  
bipolar digital transistor and small signal MOSFET.  
0.95 A, 25 V. RDS(on) = 0.45 @ VGS = 4.5 V  
RDS(on) = 0.60 @ VGS = 2.7 V.  
Low gate charge (1.64 nC typical)  
Very low level gate drive requirements allowing direct  
operation in 3V circuits (VGS(th) < 1.5V).  
Applications  
Load switch  
Gate-Source Zener for ESD ruggedness  
(>6kV Human Body Model).  
Battery protection  
Power management  
Compact industry standard SC70-6 surface mount  
package.  
S
D
1
6
5
4
D
2
3
G
D
1
pin  
D
SC70-6  
TA = 25°C unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
FDG313N  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
25  
V
V
A
VGSS  
8
±
(Note 1a)  
(Note 1a)  
ID  
Drain Current - Continuous  
- Pulsed  
0.95  
2
PD  
Power Dissipation for Single Operation  
0.75  
0.55  
W
(Note 1b)  
(Note 1c)  
0.48  
TJ, Tstg  
ESD  
Operating and Storage Junction Temperature Range  
-55 to +150  
6
C
°
Electrostatic Discharge Rating MIL-STD-883D  
Human Body Model (100pf / 1500 Ohm)  
kV  
Thermal Characteristics  
(Note 1c)  
R
θJA  
Thermal Resistance, Junction-to-Ambient  
260  
C/W  
°
Package Outlines and Ordering Information  
Device Marking  
13  
Device  
Reel Size  
Tape Width  
Quantity  
3000 units  
FDG313N  
7’’  
8mm  
.
1998 Fairchild Semiconductor Corporation  
FDG313N Rev. C  

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