是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SC-70 |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.31 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (Abs) (ID): | 0.65 A | 最大漏极电流 (ID): | 0.95 A |
最大漏源导通电阻: | 0.45 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.3 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDG313N_NL | FAIRCHILD |
获取价格 |
暂无描述 | |
FDG313ND87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 0.95A I(D), 25V, 1-Element, N-Channel, Silicon, Meta | |
FDG314P | FAIRCHILD |
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Digital FET, P-Channel | |
FDG314PD87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 0.65A I(D), 25V, 1-Element, P-Channel, Silicon, Meta | |
FDG315 | FAIRCHILD |
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N-Channel Logic Level PowerTrench MOSFET | |
FDG315N | FAIRCHILD |
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N-Channel Logic Level PowerTrench MOSFET | |
FDG315N | ONSEMI |
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N 沟道,逻辑电平,PowerTrench® MOSFET,30 V,2 A,120 mΩ | |
FDG315N_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o | |
FDG315ND87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o | |
FDG316P | FAIRCHILD |
获取价格 |
P-Channel Logic Level PowerTrench MOSFET |