FDG329N_NL

更新时间： 2024-11-18 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
5页	81K
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数据手册

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FDG329N_NL 数据手册

October 2001

FDG329N

20V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized use

in small switching regulators, providing an extremely

low R_DS(ON)and gate charge (Q_G) in a small package.

1.5 A, 20 V.

R_DS(ON)= 90 mW @ V_GS= 4.5 V.

R_DS(ON)= 115 mW @ V_GS= 2.5 V

Fast switching speed

Low gate charge (3.3 nC typical)

Applications

High performance trench technology for extremely

low R_DS(ON)

DC/DC converter

Power management

Load switch

High power and current handling capability.

Pin 1

SC70-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 12

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

1.5

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.42

0.38

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

300

333

R_qJA

°C/W

Thermal Resistance, Junction-to-Ambient

R_qJA

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.29

FDG329N

7’’

8mm

3000 units

FDG329N Rev C (W)

Ó2001 Fairchild Semiconductor International

12 3 4 5

中文翻译

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