生命周期: | Obsolete | 零件包装代码: | SC-70 |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.75 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 1.5 A |
最大漏源导通电阻: | 0.09 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDG330P | FAIRCHILD |
获取价格 |
P-Channel 1.8V Specified PowerTrench MOSFET | |
FDG330P | ONSEMI |
获取价格 |
P 沟道,1.8V 指定,PowerTrench® MOSFET,-12 V,-2 A,1 | |
FDG330P_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o | |
FDG330PREEL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o | |
FDG332PZ | FAIRCHILD |
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P-Channel PowerTrench㈢ MOSFET -20V, -2.6A, 97 | |
FDG332PZ | ONSEMI |
获取价格 |
P 沟道,PowerTrench® MOSFET,-20V,-2.6A,97mΩ | |
FDG361N | FAIRCHILD |
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N-Channel 100V Specified PowerTrenchMOSFET | |
FDG361N_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 0.6A I(D), 100V, 1-Element, N-Channel, Silicon, Meta | |
FDG361ND87Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 0.6A I(D), 100V, 1-Element, N-Channel, Silicon, Meta | |
FDG3BJ106K++4KD5 | AISHI |
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Film DC-Link |