Datasheet > FDG327NZ-G

FDG327NZ-G

更新时间： 2024-09-16 21:21:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	492K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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FDG327NZ-G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	1.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.42 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

FDG327NZ-G 数据手册

August 2008

FDG327NZ

20V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized use

in small switching regulators, providing an extremely

low R_DS(ON)and gate charge (Q_G) in a small package.

1.5 A, 20 V.

R_DS(ON)= 90 mW @ V_GS= 4.5 V.

R_DS(ON)= 100 mW @ V_GS= 2.5 V

R_DS(ON)= 140 mW @ V_GS= 1.8 V

Fast switching speed

Low gate charge

Applications

DC/DC converter

Power management

Load switch

High performance trench technology for extremely

low R_DS(ON)

High power and current handling capability.

Pin 1

SC70-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 8

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

1.5

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.42

°C

0.38

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

300

333

R_qJA

°C/W

R_qJA

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.37

FDG327NZ

7’’

8mm

3000 units

FDG327NZ Rev C1(W)

Ó2008 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

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