5秒后页面跳转
FDG329N PDF预览

FDG329N

更新时间: 2024-11-08 22:31:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 81K
描述
20V N-Channel PowerTrench MOSFET

FDG329N 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SC-70, 6 PIN
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.32
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):1.5 A最大漏极电流 (ID):1.5 A
最大漏源导通电阻:0.09 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.38 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDG329N 数据手册

 浏览型号FDG329N的Datasheet PDF文件第2页浏览型号FDG329N的Datasheet PDF文件第3页浏览型号FDG329N的Datasheet PDF文件第4页浏览型号FDG329N的Datasheet PDF文件第5页 
October 2001  
FDG329N  
20V N-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized use  
in small switching regulators, providing an extremely  
low RDS(ON) and gate charge (QG) in a small package.  
·
1.5 A, 20 V.  
RDS(ON) = 90 mW @ VGS = 4.5 V.  
RDS(ON) = 115 mW @ VGS = 2.5 V  
·
·
·
Fast switching speed  
Low gate charge (3.3 nC typical)  
Applications  
High performance trench technology for extremely  
low RDS(ON)  
·
·
·
DC/DC converter  
Power management  
Load switch  
·
High power and current handling capability.  
S
D
1
2
3
6
5
4
D
G
D
Pin 1  
D
SC70-6  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
20  
V
V
A
VGSS  
Gate-Source Voltage  
± 12  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
1.5  
6
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
0.42  
W
0.38  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
300  
333  
RqJA  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
RqJA  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.29  
FDG329N  
7’’  
8mm  
3000 units  
FDG329N Rev C (W)  
Ó2001 Fairchild Semiconductor International  

FDG329N 替代型号

型号 品牌 替代类型 描述 数据表
FDG311N_NL FAIRCHILD

功能相似

Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
SI1426DH-T1-E3 VISHAY

功能相似

Trans MOSFET N-CH 30V 2.8A 6-Pin SC-70 T/R
SI1426DH-T1-GE3 VISHAY

功能相似

N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel

与FDG329N相关器件

型号 品牌 获取价格 描述 数据表
FDG329N_NL FAIRCHILD

获取价格

暂无描述
FDG329ND87Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
FDG330P FAIRCHILD

获取价格

P-Channel 1.8V Specified PowerTrench MOSFET
FDG330P ONSEMI

获取价格

P 沟道,1.8V 指定,PowerTrench® MOSFET,-12 V,-2 A,1
FDG330P_NL FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o
FDG330PREEL FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o
FDG332PZ FAIRCHILD

获取价格

P-Channel PowerTrench㈢ MOSFET -20V, -2.6A, 97
FDG332PZ ONSEMI

获取价格

P 沟道,PowerTrench® MOSFET,-20V,-2.6A,97mΩ
FDG361N FAIRCHILD

获取价格

N-Channel 100V Specified PowerTrenchMOSFET
FDG361N_NL FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 0.6A I(D), 100V, 1-Element, N-Channel, Silicon, Meta