Datasheet > FDG318P

FDG318P

更新时间： 2024-11-17 23:51:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	69K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 20V V(BR)DSS \| 1.5A I(D) \| TSOP

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数据手册

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FDG318P 数据手册

November 1999

PRELIMINARY

FDG318P

P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is produced in

a rugged gate version of Fairchild Semiconductor’s

advanced PowerTrench process. It has been optimized

for power management applications for a wide range of

gate drive voltages (2.5V – 12V).

• –1.5 A, –20 V R_DS(ON)= 0.200 Ω @ V_GS= –4.5 V

R_DS(ON)= 0.350 Ω @ V_GS= –2.5 V

• Low gate charge (2.8nC typical)

• High performance trench technology for extremely

Applications

low R_DS(ON)

• Load switch

• Compact industry standard SC70-6 surface mount

• Power management

• DC/DC converter

package

SC70-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

V_GSS

I_D

Gate-Source Voltage

±12

–1.5

Drain Current – Continuous

– Pulsed

(Note 1a)

–6

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

0.75

0.48

T_J, T_STG

Operating and Storage Junction Temperature

Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1b)

260

R_θJA

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.18

FDG318P

7’’

8mm

3000 units

FDG318P Rev B (W)

1999 Fairchild Semiconductor Corporation

12 3 4 5

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