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FDG326 PDF预览

FDG326

更新时间: 2024-11-17 22:31:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 71K
描述
P-Channel 1.8V Specified PowerTrench MOSFET

FDG326 数据手册

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January 2001  
FDG326P  
P-Channel 1.8V Specified PowerTrench MOSFET  
General Description  
Features  
This P-Channel 1.8V specified MOSFET uses  
Fairchild’s advanced low voltage PowerTrench process.  
It has been optimized for battery power management  
applications.  
–1.5 A, –20 V.  
RDS(ON) = 140 m@ VGS = –4.5 V  
RDS(ON) = 180 m@ VGS = –2.5 V  
DS(ON) = 250 m@ VGS = –1.8 V  
R
Low gate charge  
Applications  
High performance trench technology for extremely  
Battery management  
Load switch  
low RDS(ON)  
Compact industry standard SC70-6 surface mount  
package  
1
6
5
4
2
3
SC70-6  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
–20  
VGSS  
ID  
Gate-Source Voltage  
V
A
± 8  
–1.5  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
–6  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
0.75  
W
0.48  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Note 1b)  
260  
RθJA  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.26  
FDG326P  
7’’  
8mm  
3000 units  
FDG326P Rev D(W)  
2001 Fairchild Semiconductor Corporation  

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