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FDG327NZ PDF预览

FDG327NZ

更新时间: 2024-11-22 11:13:23
品牌 Logo 应用领域
安森美 - ONSEMI PC开关光电二极管晶体管
页数 文件大小 规格书
6页 365K
描述
N 沟道,PowerTrench® MOSFET,20 V,1.5 A,90 mΩ

FDG327NZ 技术参数

是否无铅: 不含铅生命周期:Lifetime Buy
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:0.95Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:1198901
Samacsys Pin Count:6Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:SOT23 (6-Pin)Samacsys Footprint Name:6-Pin SOT-363
Samacsys Released Date:2019-07-04 16:31:39Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):1.5 A最大漏极电流 (ID):1.5 A
最大漏源导通电阻:0.09 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.38 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDG327NZ 数据手册

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FDG327NZ 替代型号

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