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FDG315ND87Z PDF预览

FDG315ND87Z

更新时间: 2024-11-06 20:02:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
8页 711K
描述
Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

FDG315ND87Z 技术参数

生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.38配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):2 A
最大漏源导通电阻:0.12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDG315ND87Z 数据手册

 浏览型号FDG315ND87Z的Datasheet PDF文件第2页浏览型号FDG315ND87Z的Datasheet PDF文件第3页浏览型号FDG315ND87Z的Datasheet PDF文件第4页浏览型号FDG315ND87Z的Datasheet PDF文件第5页浏览型号FDG315ND87Z的Datasheet PDF文件第6页浏览型号FDG315ND87Z的Datasheet PDF文件第7页 
July 2000  
FDG315N  
N-Channel Logic Level PowerTrench MOSFET  
Features  
General Description  
This N-Channel Logic Level MOSFET is produced using  
Fairchild Semiconductor's advanced PowerTrench  
process that has been especially tailored to minimize  
on-state resistance and yet maintain superior switching  
performance.  
2 A, 30 V. RDS(ON) = 0.12 @ VGS = 10 V  
RDS(ON) = 0.16 @ VGS = 4.5 V.  
Low gate charge (2.1nC typical).  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
High performance trench technology for extremely low  
RDS(ON)  
.
Compact industry standard SC70-6 surface mount  
package.  
Applications  
DC/DC converter  
Load switch  
Power Management  
S
D
1
6
5
4
D
2
3
G
D
D
SC70-6  
TA = 25°C unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
30  
V
V
A
±
Gate-Source Voltage  
20  
(Note 1a)  
Drain Current - Continuous  
- Pulsed  
2
6
PD  
(Note 1a)  
(Note 1b)  
Power Dissipation for Single Operation  
0.75  
0.48  
W
°
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
260  
C
Thermal Characteristics  
°
θ
R
Thermal Resistance, Junction-to-Ambient  
(Note 1b)  
C/W  
JA  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
FDG315N  
7’’  
8mm  
3000 units  
15  
.
2000 Fairchild Semiconductor International  
FDG315N Rev. C  

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