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FDG316P_NL PDF预览

FDG316P_NL

更新时间: 2024-11-18 13:07:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
5页 71K
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FDG316P_NL 数据手册

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December 2001  
FDG316P  
P-Channel Logic Level PowerTrench MOSFET  
General Description  
Features  
This P-Channel Logic Level MOSFET is produced using  
Fairchild Semiconductor's advanced PowerTrench  
process that has been especially tailored to minimize  
on-state resistance and yet maintain superior  
switching performance.  
-1.6 A, -30 V. RDS(ON) = 0.19 @ VGS = -10 V  
RDS(ON) = 0.30 @ VGS = -4.5 V.  
Low gate charge (3.5nC typical).  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
High performance trench technology for extremely low  
RDS(ON)  
.
Compact industry standard SC70-6 surface mount  
package.  
Applications  
DC/DC converter  
Load switch  
Power Management  
S
D
1
6
5
4
D
2
3
G
D
D
SC70-6  
TA = 25°C unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
-30  
V
VGSS  
ID  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
±20  
-1.6  
-6  
V
A
(Note 1a)  
PD  
(Note 1a)  
(Note 1b)  
Power Dissipation for Single Operation  
0.75  
0.48  
W
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
θJA  
°C/W  
(Note 1b)  
R
Thermal Resistance, Junction-to-Ambient  
260  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
FDG316P  
7’’  
8mm  
3000 units  
.36  
2001 Fairchild Semiconductor Corporation  
FDG316P Rev. D  

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