FDG316P_NL

更新时间： 2024-11-06 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体小信号场效应晶体管开关光电二极管 PC
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5页	71K
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数据手册

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FDG316P_NL 数据手册

December 2001

FDG316P

P-Channel Logic Level PowerTrench MOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain superior

switching performance.

• -1.6 A, -30 V. R_DS(ON)= 0.19 Ω @ V_GS= -10 V

R_DS(ON)= 0.30 Ω @ V_GS= -4.5 V.

• Low gate charge (3.5nC typical).

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

• High performance trench technology for extremely low

R_DS(ON)

• Compact industry standard SC70-6 surface mount

package.

Applications

• DC/DC converter

• Load switch

• Power Management

SC70-6

T_A= 25°C unless otherwise noted

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

-30

V_GSS

I_D

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

±20

-1.6

-6

(Note 1a)

P_D

(Note 1a)

(Note 1b)

Power Dissipation for Single Operation

0.75

0.48

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

_θJA

°C/W

(Note 1b)

Thermal Resistance, Junction-to-Ambient

260

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDG316P

7’’

8mm

3000 units

.36

2001 Fairchild Semiconductor Corporation

FDG316P Rev. D

12 3 4 5

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