FDC604

更新时间： 2024-09-13 22:49:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	359K
描述
P-Channel 1.8V Specified PowerTrench MOSFET

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中文翻译

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数据手册

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FDC604 数据手册

June 2000

PRELIMINARY

FDC604P

P-Channel 1.8V Specified PowerTrench^MOSFET

General Description

Features

This P-Channel 1.8V specified MOSFET uses

Fairchild’s low voltage PowerTrench process. It has

been optimized for battery power management

applications.

• –5.5 A, –20 V. R_DS(ON)= 0.033 Ω @ V_GS= –4.5 V

R_DS(ON)= 0.043 Ω @ V_GS= –2.5 V

_DS(ON)= 0.060 Ω @ V_GS= –1.8 V

• Fast switching speed.

Applications

• High performance trench technology for extremely

low R_DS(ON)

• Battery management

• Load switch

• Battery protection

SuperSOT ^TM-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–20

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

-5.5

-20

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.604

FDC604P

7’’

8mm

3000 units

FDC604P Rev B (W)

2000 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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