Datasheet > FDC604P

FDC604P

更新时间： 2024-09-15 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	1279K
描述
种类:P-Channel;漏源电压（Vdss）:-20V;持续漏极电流（Id）（在25°C时）:-6A;Vgs(th)(V):±12;漏源导通电阻:35mΩ@-4.5V

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FDC604P 数据手册

FDC604P

-20V P-Channel Enhancement Mode MOSFET

UMW

Description

Pin Assignment

The FDC604P is the high cell density trenched P-

channel MOSFETs, which provide excellent RDSON

gate charge for most of the synchronous buck

and

converter applications.

The FDC604P meet the RoHS and Green Product

requirement with full function reliability approved.

Super Low Gate Charge

Green Device Available

Excellent CdV/dt effect decline

Advanced high cell density Trench

technology

Product Summary

V_DS= -20V I_D=-6.0A

R_DS(ON)< 35mΩ @ V_GS=10V

R_DS(ON)< 53 mΩ@ V_GS=4.5V

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

-20

±12

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current, V_GS@ -4.5V¹

Pulsed Drain Current²

-6.0

-3.0

-16

P_D@T_A=25℃

P_D@T_A=70℃

T_STG

Total Power Dissipation³

1.31

℃

0.84

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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与FDC604P相关器件

型号	品牌	获取价格	描述	数据表
FDC604P_01	FAIRCHILD	获取价格	P-Channel 1.8V Specified PowerTrench MOSFET
FDC604P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
FDC604P-F073	FAIRCHILD	获取价格	Transistor
FDC606P	FAIRCHILD	获取价格	P-Channel 1.8V Specified PowerTrench MOSFET
FDC606P	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，1.8V 指定，-12V，-6A，26m
FDC606P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 6A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-o
FDC608PZ	FAIRCHILD	获取价格	P-Channel 2.5V Specified PowerTrench MOSFET
FDC608PZ	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-5.8A，3
FDC608PZ-F171	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-5.8A，3
FDC610PZ	FAIRCHILD	获取价格	P-Channel PowerTrench㈢ MOSFET