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CGH40025

更新时间： 2024-11-14 01:15:19

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CGH40025 数据手册

CGH40025

25 W, RF Power GaN HEMT

Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general

purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efﬁciency, high gain and wide bandwidth capabilities

making the CGH40025 ideal for linear and compressed ampliﬁer circuits. The

transistor is available in a screw-down, ﬂange package and solder-down, pill

packages.

FEATURES

APPLICATIONS

•

Up to 6 GHz Operation

•

2-Way Private Radio

15 dB Small Signal Gain at 2.0 GHz

13 dB Small Signal Gain at 4.0 GHz

30 W typical P_SAT

Broadband Ampliﬁers

Cellular Infrastructure

Test Instrumentation

62 % Efﬁciency at P_SAT

Class A, AB, Linear ampliﬁers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

28 V Operation

Subject to change without notice.

www.cree.com/wireless

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型号	品牌	获取价格	描述	数据表
CGH40025F	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025F-AMP	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025F-TB	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025P	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Elec
CGH40035	MACOM	获取价格	35 W RF Power GaN HEMT
CGH40035F	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40035F-AMP	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40035F-TB	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40045	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045	MACOM	获取价格	45 W RF Power GaN HEMT