Datasheet > CGH40035F

CGH40035F

更新时间： 2024-11-14 01:15:19

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CGH40035F 数据手册

CGH40035F

35 W, RF Power GaN HEMT

Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general

purpose, broadband solution to a variety of RF and microwave applications. GaN

HEMTs offer high efﬁciency, high gain and wide bandwidth capabilities making the

CGH40035F ideal for linear and compressed ampliﬁer circuits. The transistor is

available in a screw-down, ﬂange package.

FEATURES

APPLICATIONS

•

Up to 4 GHz Operation

•

2-Way Private Radio

15 dB Small Signal Gain at 2.0 GHz

13 dB Small Signal Gain at 4.0 GHz

45 W typical P_SAT

Broadband Ampliﬁers

Cellular Infrastructure

Test Instrumentation

60 % Efﬁciency at P_SAT

Class A, AB, Linear ampliﬁers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

28 V Operation

Subject to change without notice.

www.cree.com/rf

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型号	品牌	获取价格	描述	数据表
CGH40035F-AMP	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40035F-TB	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40045	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045	MACOM	获取价格	45 W RF Power GaN HEMT
CGH40045_15	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045F-AMP	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045F-TB	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045P	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Elec
CGH40045P-AMP	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045P-TB	CREE	获取价格	45 W, RF Power GaN HEMT