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CGH40035F-TB

更新时间： 2024-11-14 01:15:19

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CGH40035F-TB 数据手册

CGH40035F

35 W, RF Power GaN HEMT

Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general

purpose, broadband solution to a variety of RF and microwave applications. GaN

HEMTs offer high efﬁciency, high gain and wide bandwidth capabilities making the

CGH40035F ideal for linear and compressed ampliﬁer circuits. The transistor is

available in a screw-down, ﬂange package.

FEATURES

APPLICATIONS

•

Up to 4 GHz Operation

•

2-Way Private Radio

15 dB Small Signal Gain at 2.0 GHz

13 dB Small Signal Gain at 4.0 GHz

45 W typical P_SAT

Broadband Ampliﬁers

Cellular Infrastructure

Test Instrumentation

60 % Efﬁciency at P_SAT

Class A, AB, Linear ampliﬁers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

28 V Operation

Subject to change without notice.

www.cree.com/rf

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型号	品牌	获取价格	描述	数据表
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