Datasheet > CGH40045

CGH40045

更新时间： 2024-11-14 15:19:51

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
15页	1273K
描述
45 W RF Power GaN HEMT

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CGH40045 数据手册

CGH40045

45 W, DC - 4 GHz RF Power GaN HEMT

Description

The CGH40045 is an unmatched, gallium nitride (GaN)

highelectron mobility transistor (HEMT). The CGH40045,

operating from a 28 volt rail, oﬀers a general purpose, broadband

solution to a variety of RF and microwave applications. GaN HEMT

soﬀer high eﬀiciency, high gain and wide bandwidth capabilities

making the CGH40045 ideal for linear and compressed ampliﬁer

circuits. The transistor is available in a ﬂange and pill package.

Package Types: 440193 & 440206

PN’s: CGH40045F & CGH40045P

Features

Applications

•

Up to 4 GHz Operation

16 dB Small Signal Gain at 2.0 GHz

12 dB Small Signal Gain at 4.0 GHz

55 W Typical P_SAT

55% Eﬀiciency at P_SAT

28 V Operation

•

2-Way Private Radio

Broadband Ampliﬁers

Cellular Infrastructure

Test Instrumentation

Class A, AB, Linear ampliﬁers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 5.0, 2022-8-4

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...15

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与CGH40045相关器件

型号	品牌	获取价格	描述	数据表
CGH40045_15	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045F-AMP	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045F-TB	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045P	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Elec
CGH40045P-AMP	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045P-TB	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40090	MACOM	获取价格	90 W RF Power GaN HEMT
CGH40090PP	CREE	获取价格	90 W, RF Power GaN HEMT
CGH40090PP-AMP	CREE	获取价格	90 W, RF Power GaN HEMT
CGH40090PP-TB	CREE	获取价格	90 W, RF Power GaN HEMT