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CGH40090PP-AMP PDF预览

CGH40090PP-AMP

更新时间: 2024-11-14 01:15:19
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
13页 1437K
描述
90 W, RF Power GaN HEMT

CGH40090PP-AMP 数据手册

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CGH40090PP  
90 W, RF Power GaN HEMT  
Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electro
mobility transistor (HEMT). The CGH40090PP, operating from a 28 vo
rail, offers a general purpose, broadband solution to a variety of RF an
microwave applications. GaN HEMTs offer high efficiency, high gain an
wide bandwidth capabilities making the CGH40090PP ideal for linea
and compressed amplifier circuits. The transistor is available in a 4-lead  
flange package.  
Typical Performance Over 500 MHz - 2.5 GHz (TC = 25˚C) of Demonstration Amplifier  
Parameter  
500 MHz  
1.0 GHz  
1.5 GHz  
2.0 GHz  
2.5 GHz  
Units  
Small Signal Gain  
17.6  
15.6  
14.1  
12.4  
12.4  
dB  
Gain at PSAT  
13.7  
66.8  
48.5  
7.3  
11.7  
102.7  
57.0  
9.2  
7.0  
101.7  
59.2  
14.3  
10.4  
57.0  
37.3  
11.3  
dB  
W
Saturated Power  
Drain Efficiency at PSAT  
Input Return Loss  
91.4  
56.6  
14.9  
%
23.0  
dB  
Features  
Up to 2.5 GHz Operation  
16 dB Small Signal Gain at 2.0 GHz  
100 W Typical PSAT  
55 % Efficiency at PSAT  
28 V Operation  
Subject to change without notice.  
www.cree.com/rf  
1

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