Datasheet > CGH40120

CGH40120

更新时间： 2024-09-26 17:01:43

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描述
120 W RF Power GaN HEMT

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CGH40120F

120 W, RF Power GaN HEMT

Description

The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT). The CGH40120F, operating from a 28 volt rail, oﬀers a

general purpose, broadband solution to a variety of RF and microwave

applications. GaN HEMTs oﬀer high eﬀiciency, high gain, and wide bandwidth

capabilities making the CGH40120F ideal for linear and compressed ampliﬁer

circuits. The transistor is available in a ﬂange package.

Package Types: 440193

PN’s: CGH40120F

Features

Applications

•

Up to 2.5 GHz operation

•

2-Way private radio

Broadband ampliﬁers

Cellular infrastructure

Test instrumentation

Class A, AB, linear ampliﬁers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms

20 dB small signal gain at 1.0 GHz

15 dB small signal gain at 2.0 GHz

120 W typical P_SAT

70% eﬀiciency at P_SAT

28 V operation

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 4.2, SEPTEMBER 2023

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...13

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CGH40180PP-TB	CREE	获取价格	180 W, RF Power GaN HEMT