Datasheet > CGH40120P-TB

CGH40120P-TB

更新时间： 2024-09-26 01:11:07

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CGH40120P-TB 数据手册

CGH40120P

120 W, RF Power GaN HEMT

Cree’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general

purpose, broadband solution to a variety of RF and microwave applications. GaN

HEMTs offer high efﬁciency, high gain and wide bandwidth capabilities making the

CGH40120P ideal for linear and compressed ampliﬁer circuits. The transistor is

available in a metal-ceramic pill package.

FEATURES

APPLICATIONS

•

Up to 2.5 GHz Operation

•

2-Way Private Radio

20 dB Small Signal Gain at 1.0 GHz

15 dB Small Signal Gain at 2.0 GHz

120 W Typical P_SAT

Broadband Ampliﬁers

Cellular Infrastructure

Test Instrumentation

70 % Efﬁciency at P_SAT

Class A, AB, Linear ampliﬁers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

28 V Operation

Subject to change without notice.

www.cree.com/rf

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