Datasheet > CGH40180PP

CGH40180PP

更新时间： 2024-09-26 01:11:07

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CGH40180PP 数据手册

CGH40180PP

180 W, RF Power GaN HEMT

Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs offer high efﬁciency, high gain and

wide bandwidth capabilities making the CGH40180PP ideal for linear

and compressed ampliﬁer circuits. The transistor is available in a 4-lead

ﬂange package.

FEATURES

APPLICATIONS

•

Up to 2.5 GHz Operation

•

2-Way Private Radio

20 dB Small Signal Gain at 1.0 GHz

15 dB Small Signal Gain at 2.0 GHz

220 W typical P_SAT

Broadband Ampliﬁers

Cellular Infrastructure

Test Instrumentation

70 % Efﬁciency at P_SAT

Class A, AB, Linear ampliﬁers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

28 V Operation

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...13

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