Datasheet > CGH40120F-TB

CGH40120F-TB

更新时间： 2024-09-26 01:11:07

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CGH40120F-TB 数据手册

CGH40120F

120 W, RF Power GaN HEMT

Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGH40120F, operating from a 28 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs offer high efﬁciency, high gain and

wide bandwidth capabilities making the CGH40120F ideal for linear and

compressed ampliﬁer circuits. The transistor is available in a ﬂange

package.

FEATURES

APPLICATIONS

•

Up to 2.5 GHz Operation

•

2-Way Private Radio

20 dB Small Signal Gain at 1.0 GHz

15 dB Small Signal Gain at 2.0 GHz

120 W Typical P_SAT

Broadband Ampliﬁers

Cellular Infrastructure

Test Instrumentation

70 % Efﬁciency at P_SAT

Class A, AB, Linear ampliﬁers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

28 V Operation

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...13

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