Datasheet > CGH40180

CGH40180

更新时间： 2024-11-14 17:01:11

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
14页	1953K
描述
180 W RF Power GaN HEMT

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CGH40180 数据手册

CGH40180PP

180 W, RF Power GaN HEMT

Description

The CGH40180PP is an unmatched, gallium nitride (GaN) high

electron mobility transistor (HEMT). The CGH40180PP, operating

from a 28 volt rail, offers a general purpose, broadband solution

to a variety of RF and microwave applications. GaN HEMTs

offer high efficiency, high gain and wide bandwidth capabilities

making the CGH40180PP ideal for linear and compressed

amplifier circuits. The transistor is available in a 4-lead flange

package.

Package Types: 440199

PN: CGH40180PP

Features

Applications

•

Up to 2.5 GHz Operation

20 dB Small Signal Gain at 1.0 GHz

15 dB Small Signal Gain at 2.0 GHz

220 W typical P_SAT

70% Eﬀiciency at P_SAT

28 V Operation

•

2-Way Private Radio

Broadband Amplifiers

Cellular Infrastructure

Test Instrumentation

Class A, AB, Amplifiers suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 3.3, 2022-11-17

For further information and support please visit:

https://www.macom.com/support

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