CGH40180PP
180 W, RF Power GaN HEMT
Description
The CGH40180PP is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40180PP, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs
offer high efficiency, high gain and wide bandwidth capabilities
making the CGH40180PP ideal for linear and compressed
amplifier circuits. The transistor is available in a 4-lead flange
package.
Package Types: 440199
PN: CGH40180PP
Features
Applications
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Up to 2.5 GHz Operation
20 dB Small Signal Gain at 1.0 GHz
15 dB Small Signal Gain at 2.0 GHz
220 W typical PSAT
70% Efficiency at PSAT
28 V Operation
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2-Way Private Radio
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Amplifiers suitable for OFDM,
W-CDMA, EDGE, CDMA waveforms
Large Signal Models Available for ADS and MWO
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Visit www.macom.com for additional data sheets and product information.
Rev. 3.3, 2022-11-17
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