Datasheet > CGH40090

CGH40090

更新时间： 2024-11-14 17:01:51

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描述
90 W RF Power GaN HEMT

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CGH40090 数据手册

CGH40090PP

90 W, RF Power GaN HEMT

Description

The CGH40090PP is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt

rail, oﬀers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs oﬀer high eﬀiciency, high gain and

wide bandwidth capabilities making the CGH40090PP ideal for linear

and compressed ampliﬁer circuits. The transistor is available in a 4-lead

ﬂange package.

Package Types: 440199

PN’s: CGH40090PP

Features

•

Up to 2.5 GHz operation

16 dB small signal gain at 2.0 GHz

100 W typical P_SAT

55% eﬀiciency at P_SAT

28 V operation

Typical Performance Over 500 MHz - 2.5 GHz (T_C= 25 °C) of Demonstration Amplifier

Parameter

500 GHz

1.0 GHz

1.5 GHz

2.0 GHz

2.5 GHz

Units

Small Signal Gain

17.6

15.6

14.1

12.4

Gain at P_SAT

13.7

66.8

48.5

7.3

11.7

102.7

57.0

9.2

7.0

101.7

59.2

14.3

10.4

57.0

37.3

11.3

Saturated Power

Drain Eﬀiciency at P_SAT

Input Return Loss

91.4

56.6

14.9

23.0

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 5.4, SEPTEMBER 2023

For further information and support please visit:

https://www.macom.com/support

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