Datasheet > CGH40045F-TB

CGH40045F-TB

更新时间： 2024-09-26 01:06:15

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CGH40045F-TB 数据手册

CGH40045

45 W, RF Power GaN HEMT

Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general

purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efﬁciency, high gain and wide bandwidth capabilities

making the CGH40045 ideal for linear and compressed ampliﬁer circuits. The

transistor is available in a ﬂange and pill package.

FEATURES

APPLICATIONS

•

Up to 4 GHz Operation

•

2-Way Private Radio

16 dB Small Signal Gain at 2.0 GHz

12 dB Small Signal Gain at 4.0 GHz

55 W Typical P_SAT

Broadband Ampliﬁers

Cellular Infrastructure

Test Instrumentation

55 % Efﬁciency at P_SAT

Class A, AB, Linear ampliﬁers suitable for

OFDM, W-CDMA, EDGE, CDMA waveforms

28 V Operation

Subject to change without notice.

www.cree.com/rf

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型号	品牌	获取价格	描述	数据表
CGH40045P	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Elec
CGH40045P-AMP	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045P-TB	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40090	MACOM	获取价格	90 W RF Power GaN HEMT
CGH40090PP	CREE	获取价格	90 W, RF Power GaN HEMT
CGH40090PP-AMP	CREE	获取价格	90 W, RF Power GaN HEMT
CGH40090PP-TB	CREE	获取价格	90 W, RF Power GaN HEMT
CGH40120	MACOM	获取价格	120 W RF Power GaN HEMT
CGH40120F	CREE	获取价格	120 W, RF Power GaN HEMT
CGH40120F-AMP	CREE	获取价格	120 W, RF Power GaN HEMT