Datasheet > CGH40090PP

CGH40090PP

更新时间： 2024-09-26 01:15:19

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
13页	1437K
描述
90 W, RF Power GaN HEMT

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CGH40090PP 数据手册

CGH40090PP

90 W, RF Power GaN HEMT

Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt

rail, offers a general purpose, broadband solution to a variety of RF and

microwave applications. GaN HEMTs offer high efﬁciency, high gain and

wide bandwidth capabilities making the CGH40090PP ideal for linear

and compressed ampliﬁer circuits. The transistor is available in a 4-lead

ﬂange package.

Typical Performance Over 500 MHz - 2.5 GHz ^(T_C^{= 25˚C)}of Demonstration Ampliﬁer

Parameter

500 MHz

1.0 GHz

1.5 GHz

2.0 GHz

2.5 GHz

Units

Small Signal Gain

17.6

15.6

14.1

12.4

Gain at P_SAT

13.7

66.8

48.5

7.3

11.7

102.7

57.0

9.2

7.0

101.7

59.2

14.3

10.4

57.0

37.3

11.3

Saturated Power

Drain Efﬁciency at P_SAT

Input Return Loss

91.4

56.6

14.9

23.0

Features

•

Up to 2.5 GHz Operation

16 dB Small Signal Gain at 2.0 GHz

100 W Typical P_SAT

55 % Efﬁciency at P_SAT

28 V Operation

Subject to change without notice.

www.cree.com/rf

12 3 4 5 6 7...13

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