Datasheet > CGH40045

CGH40045

更新时间： 2024-11-13 03:25:23

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CGH40045 数据手册

PRELIMINARY

CGH40045

45 W, RF Power GaN HEMT

Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high

electron mobility transistor (HEMT). The CGH40045, operating

from a 28 volt rail, offers a general purpose, broadband solution

to a variety of RF and microwave applications. GaN HEMTs offer

high efﬁciency, high gain and wide bandwidth capabilities making

the CGH40045 ideal for linear and compressed ampliﬁer circuits.

The transistor is available in a ﬂange package.

FEATURES

APPLICATIONS

• Up to 4 GHz Operation

• 2-Way Private Radio

• >16 dB Small Signal Gain at 2.0 GHz

• 12 dB Small Signal Gain at 4.0 GHz

• 55 W Typical P_3dB

• Broadband Ampliﬁers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear ampliﬁers suitable

for OFDM, W-CDMA, EDGE, CDMA

waveforms

• 55 % Efﬁciency at P3dB

• 28 V Operation

Subject to change without notice.

www.cree.com/wireless

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型号	品牌	获取价格	描述	数据表
CGH40045_15	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045F-AMP	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045F-TB	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045P	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Elec
CGH40045P-AMP	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045P-TB	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40090	MACOM	获取价格	90 W RF Power GaN HEMT
CGH40090PP	CREE	获取价格	90 W, RF Power GaN HEMT
CGH40090PP-AMP	CREE	获取价格	90 W, RF Power GaN HEMT
CGH40090PP-TB	CREE	获取价格	90 W, RF Power GaN HEMT