Datasheet > CGH40035

CGH40035

更新时间： 2024-11-14 15:19:43

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描述
35 W RF Power GaN HEMT

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CGH40035 数据手册

CGH40035F

35 W, DC - 4 GHz, RF Power GaN HEMT

Description

The CGH40035F is an unmatched, gallium nitride (GaN) high

electron mobility transistor (HEMT). The CGH40035F, operating

from a 28 volt rail, offers a general purpose, broadband solution

to a variety of RF and microwave applications. GaN HEMTs

offer high efficiency, high gain and wide bandwidth capabilities

making the CGH40035F ideal for linear and compressed

amplifier circuits. The transistor is available in a screw-down,

flange package.

Package Type: 440193

PN: CGH40035F

Features

Applications

•

Up to 4 GHz Operation

15 dB Small Signal Gain at 2.0 GHz

13 dB Small Signal Gain at 4.0 GHz

45 W typical P_SAT

60% Eﬀiciency at P_SAT

28 V Operation

•

2-Way Private Radio

Broadband Amplifiers

Cellular Infrastructure

Test Instrumentation

Class A, AB, Linear Amplifiers Suitable for OFDM,

W-CDMA, EDGE, CDMA waveforms

Large Signal Models Available for ADS and MWO

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 4.2, 2022-11-17

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...14

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与CGH40035相关器件

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CGH40035F	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40035F-AMP	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40035F-TB	CREE	获取价格	35 W, RF Power GaN HEMT
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CGH40045_15	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045F-AMP	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045F-TB	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045P	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Elec
CGH40045P-AMP	CREE	获取价格	45 W, RF Power GaN HEMT