Datasheet > CGH40025F

CGH40025F

更新时间： 2024-11-13 03:25:23

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

CGH40025F 数据手册

PRELIMINARY

CGH40025F

25 W, RF Power GaN HEMT

Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high

electron mobility transistor (HEMT). The CGH40025, operating

from a 28 volt rail, offers a general purpose, broadband solution

to a variety of RF and microwave applications. GaN HEMTs offer

high efﬁciency, high gain and wide bandwidth capabilities making

the CGH40025 ideal for linear and compressed ampliﬁer circuits.

The transistor is available in a screw-down, ﬂange package.

FEATURES

APPLICATIONS

• Up to 4 GHz Operation

• 2-Way Private Radio

• 16 dB Small Signal Gain at 2.0 GHz

• 13 dB Small Signal Gain at 4.0 GHz

• 30 W typical P_3dB

• Broadband Ampliﬁers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear ampliﬁers suitable

for OFDM, W-CDMA, EDGE, CDMA

waveforms

• 62 % Efﬁciency at P3dB

• 28 V Operation

Subject to change without notice.

www.cree.com/wireless

ꢀ

12 3 4 5 6 7...12

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
CGH40025F-AMP	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025F-TB	CREE	获取价格	25 W, RF Power GaN HEMT
CGH40025P	CREE	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Elec
CGH40035	MACOM	获取价格	35 W RF Power GaN HEMT
CGH40035F	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40035F-AMP	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40035F-TB	CREE	获取价格	35 W, RF Power GaN HEMT
CGH40045	CREE	获取价格	45 W, RF Power GaN HEMT
CGH40045	MACOM	获取价格	45 W RF Power GaN HEMT
CGH40045_15	CREE	获取价格	45 W, RF Power GaN HEMT