5秒后页面跳转
BUZ100SL-4 PDF预览

BUZ100SL-4

更新时间: 2024-11-23 22:08:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
8页 92K
描述
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

BUZ100SL-4 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G28针数:28
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.26
其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):380 mJ
配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):7.4 A最大漏极电流 (ID):7.4 A
最大漏源导通电阻:0.023 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G28元件数量:4
端子数量:28工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):9.6 W
最大脉冲漏极电流 (IDM):29.6 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUZ100SL-4 数据手册

 浏览型号BUZ100SL-4的Datasheet PDF文件第2页浏览型号BUZ100SL-4的Datasheet PDF文件第3页浏览型号BUZ100SL-4的Datasheet PDF文件第4页浏览型号BUZ100SL-4的Datasheet PDF文件第5页浏览型号BUZ100SL-4的Datasheet PDF文件第6页浏览型号BUZ100SL-4的Datasheet PDF文件第7页 
BUZ 100SL-4  
Preliminary data  
®
SIPMOS Power Transistor  
• Quad-channel  
• Enhancement mode  
• Logic level  
• Avalanche-rated  
• dv/dt rated  
Type  
V
I
R
Package  
P-DSO-28  
Ordering Code  
DS  
D
DS(on)  
BUZ 100SL-4 55 V  
7.4 A  
0.023  
C67078-S. . . .- . .  
Maximum Ratings  
Parameter  
Symbol  
Values  
7.4  
Unit  
Continuous drain current one channel active  
I
A
D
T = 25 °C  
A
Pulsed drain current one channel active  
I
Dpuls  
T = 25 °C  
29.6  
A
Avalanche energy, single pulse  
E
mJ  
AS  
I = 7.4 A, V = 25 V, R = 25 Ω  
D
DD  
GS  
L = 13.8 mH, T = 25 °C  
380  
j
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = 7.4 A, V = 40 V, di /dt = 200 A/µs  
S
DS  
F
T
= 175 °C  
6
jmax  
±
Gate source voltage  
Power dissipation ,one channel active  
V
P
14  
V
GS  
W
tot  
T = 25 °C  
2.4  
A
Operating temperature  
T
-55 ... + 175 °C  
-55 ... + 175  
j
Storage temperature  
T
stg  
IEC climatic category, DIN IEC 68-1  
55 / 175 / 56  
Semiconductor Group  
1
01/Oct/1997  

与BUZ100SL-4相关器件

型号 品牌 获取价格 描述 数据表
BUZ100SLE3045 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 70A I(D) | TO-263AB
BUZ100SLE3045A INFINEON

获取价格

Power Field-Effect Transistor, 70A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
BUZ100SQ67040W4001A2 ETC

获取价格

TRANSISTOR LEISTUNGS MOSFET
BUZ101 INFINEON

获取价格

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-r
BUZ101L INFINEON

获取价格

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
BUZ101S INFINEON

获取价格

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
BUZ101SE3045 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 22A I(D) | TO-263AB
BUZ101SE3045A ETC

获取价格

N-Channel Enhancement MOSFET
BUZ101SL INFINEON

获取价格

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)
BUZ101SL4 ETC

获取价格

TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 4.1A I(D) | SO