生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G28 | 针数: | 28 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.26 |
其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 380 mJ |
配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (Abs) (ID): | 7.4 A | 最大漏极电流 (ID): | 7.4 A |
最大漏源导通电阻: | 0.023 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G28 | 元件数量: | 4 |
端子数量: | 28 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 9.6 W |
最大脉冲漏极电流 (IDM): | 29.6 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUZ100SLE3045 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 70A I(D) | TO-263AB | |
BUZ100SLE3045A | INFINEON |
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Power Field-Effect Transistor, 70A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Met | |
BUZ100SQ67040W4001A2 | ETC |
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TRANSISTOR LEISTUNGS MOSFET | |
BUZ101 | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-r | |
BUZ101L | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) | |
BUZ101S | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) | |
BUZ101SE3045 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 22A I(D) | TO-263AB | |
BUZ101SE3045A | ETC |
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N-Channel Enhancement MOSFET | |
BUZ101SL | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) | |
BUZ101SL4 | ETC |
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TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 4.1A I(D) | SO |