5秒后页面跳转
BUZ102SE3045A PDF预览

BUZ102SE3045A

更新时间: 2024-11-27 03:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
8页 129K
描述
SIPMOS Power Transistor

BUZ102SE3045A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:PLASTIC, TO-263, 3 PIN
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.7
其他特性:AVALANCHE RATED雪崩能效等级(Eas):245 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):52 A最大漏极电流 (ID):52 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):120 W最大脉冲漏极电流 (IDM):208 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BUZ102SE3045A 数据手册

 浏览型号BUZ102SE3045A的Datasheet PDF文件第2页浏览型号BUZ102SE3045A的Datasheet PDF文件第3页浏览型号BUZ102SE3045A的Datasheet PDF文件第4页浏览型号BUZ102SE3045A的Datasheet PDF文件第5页浏览型号BUZ102SE3045A的Datasheet PDF文件第6页浏览型号BUZ102SE3045A的Datasheet PDF文件第7页 
BUZ 102S  
SIPMOSPower Transistor  
Product Summary  
Features  
Drain source voltage  
55  
0.018  
52  
V
V
DS  
N channel  
Drain-Source on-state resistance  
Continuous drain current  
R
Enhancement mode  
Avalanche rated  
d /d rated  
175 ˚C operating temperature  
DS(on)  
A
I
D
v
t
Pin 1 Pin 2 Pin 3  
Type  
Package  
Ordering Code  
Packaging  
G
D
S
BUZ102S  
P-TO220-3-1 Q67040-S4011-A2 Tube  
P-TO263-3-2 Q67040-S4011-A6 Tape and Reel  
P-TO263-3-2 Q67040-S4011-A5 Tube  
BUZ102S E3045A  
BUZ102S E3045  
Maximum Ratings, at  
T
= 25 ˚C unless unless specified  
j
Parameter  
Symbol  
Value  
Unit  
Continuous drain current  
A
I
D
T
= 25 ˚C  
52  
37  
C
T
= 100 ˚C  
C
Pulsed drain current  
= 25 ˚C  
208  
IDpulse  
T
C
Avalanche energy, single pulse  
= 52 A, = 25 V, = 25  
245  
mJ  
E
E
AS  
I
V
R
GS  
D
DD  
12  
6
Avalanche energy, periodic limited by  
Reverse diode d /d  
= 52 A, = 40 V, d  
T
jmax  
AR  
kV/µs  
v
t
d
v
/d  
t
I
V
i/d  
t
= 200 A/  
µ
s,  
S
DS  
T
= 175 ˚C  
jmax  
Gate source voltage  
Power dissipation  
V
V
P
20  
GS  
120  
W
tot  
T
= 25 ˚C  
C
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55... +175  
55/175/56  
˚C  
T , T  
j stg  
Data Book  
1
05.99  

与BUZ102SE3045A相关器件

型号 品牌 获取价格 描述 数据表
BUZ102SL INFINEON

获取价格

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rate
BUZ102SL4 ETC

获取价格

TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 6.2A I(D) | SO
BUZ102SL-4 INFINEON

获取价格

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t
BUZ102SLE3045 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 47A I(D) | TO-263AB
BUZ102SLE3045A INFINEON

获取价格

Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Met
BUZ103 INFINEON

获取价格

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-r
BUZ103AL INFINEON

获取价格

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t ra
BUZ103S INFINEON

获取价格

SIPMOS Power Transistor (N channel Enhancemen
BUZ103S4 ETC

获取价格

TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 5.3A I(D) | SO
BUZ103S-4 INFINEON

获取价格

Power Field-Effect Transistor, 5.3A I(D), 55V, 0.045ohm, 4-Element, N-Channel, Silicon, Me