生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | PLASTIC, TO-220, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.44 |
其他特性: | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 雪崩能效等级(Eas): | 90 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.07 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 80 A | 认证状态: | COMMERCIAL |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUZ101SE3045 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 22A I(D) | TO-263AB |
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BUZ101SE3045A | ETC |
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N-Channel Enhancement MOSFET |
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BUZ101SL | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) |
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BUZ101SL4 | ETC |
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TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 4.1A I(D) | SO |
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BUZ101SL-4 | INFINEON |
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SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t |
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BUZ101SLE3045 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-263AB |
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BUZ101SLE3045A | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) |
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BUZ102 | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) |
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BUZ102AL | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t ra |
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BUZ102S | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) |
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