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BUZ101S PDF预览

BUZ101S

更新时间: 2024-02-13 10:24:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
8页 72K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

BUZ101S 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:PLASTIC, TO-220, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.44
其他特性:LOGIC LEVEL COMPATIBLE, AVALANCHE RATED雪崩能效等级(Eas):90 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.07 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):80 A认证状态:COMMERCIAL
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON

BUZ101S 数据手册

 浏览型号BUZ101S的Datasheet PDF文件第2页浏览型号BUZ101S的Datasheet PDF文件第3页浏览型号BUZ101S的Datasheet PDF文件第4页浏览型号BUZ101S的Datasheet PDF文件第5页浏览型号BUZ101S的Datasheet PDF文件第6页浏览型号BUZ101S的Datasheet PDF文件第7页 
BUZ 101 S  
Preliminary data  
SPP22N05  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
• dv/dt rated  
• 175°C operating temperature  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
V
I
R
DS(on)  
Package  
Ordering Code  
DS  
D
BUZ 101 S  
55 V  
22 A  
0.06 Ω  
TO-220 AB  
Q67040-S4013-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
22  
16  
C
T = 100 °C  
C
Pulsed drain current  
I
Dpuls  
T = 25 °C  
88  
C
Avalanche energy, single pulse  
I = 22 A, V = 25 V, R = 25 Ω  
E
mJ  
AS  
D
DD  
GS  
L = 372 µH, T = 25 °C  
90  
22  
5.5  
j
Avalanche current,limited by T  
I
A
jmax  
AR  
Avalanche energy,periodic limited by T  
Reverse diode dv/dt  
E
mJ  
jmax  
AR  
dv/dt  
kV/µs  
I = 22 A, V = 40 V, di /dt = 200 A/µs  
S
DS  
F
T
= 175 °C  
6
jmax  
Gate source voltage  
Power dissipation  
V
P
± 20  
V
GS  
W
tot  
T = 25 °C  
55  
C
Semiconductor Group  
1
04/Nov/1997  

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