是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | D2PAK | 包装说明: | PLASTIC, TO-263, 3 PIN |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.73 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 90 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (Abs) (ID): | 22 A |
最大漏极电流 (ID): | 22 A | 最大漏源导通电阻: | 0.05 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 55 W |
最大脉冲漏极电流 (IDM): | 88 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUZ101SL | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) | |
BUZ101SL4 | ETC |
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TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 4.1A I(D) | SO | |
BUZ101SL-4 | INFINEON |
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SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t | |
BUZ101SLE3045 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-263AB | |
BUZ101SLE3045A | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated) | |
BUZ102 | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) | |
BUZ102AL | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t ra | |
BUZ102S | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) | |
BUZ102S4 | ETC |
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TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 6.4A I(D) | SO | |
BUZ102S-4 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.4A I(D), 55V, 0.028ohm, 4-Element, N-Channel, Silicon, Me |