BUZ103

更新时间： 2024-09-24 22:27:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	190K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

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中文翻译

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数据手册

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BUZ103 数据手册

BUZ 103

SIPMOS Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• dv/dt rated

• Low on-resistance

• 175°C operating temperature

• also in TO-220 SMD available

Pin 1

Pin 2

Pin 3

Type

DS(on)

Package

Ordering Code

Ω

BUZ 103

50 V

40 A

0.04

TO-220 AB

C67078-S1352-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T = 23 °C

Pulsed drain current

Dpuls

T = 25 °C

160

Avalanche energy, single pulse

Ω

I = 40 A, V = 25 V, R = 25

L = 63 µH, T = 25 °C

100

Reverse diode dv/dt

dv/dt

kV/µs

I = 40 A, V = 40 V, di /dt = 200 A/µs

= 175 °C

jmax

Gate source voltage

Power dissipation

tot

T = 25 °C

120

Operating temperature

Storage temperature

-55 ... + 175 °C

-55 ... + 175

stg

≤

Thermal resistance, chip case

1.25

K/W

thJC

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

≤ 75

thJA

55 / 175 / 56

Semiconductor Group

07/96

12 3 4 5 6 7...9

中文翻译

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与BUZ103相关器件

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BUZ103S	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancemen
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BUZ103SL	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rate
BUZ103SL	ROCHESTER	获取价格	28A, 55V, 0.044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, 3 PIN
BUZ103SL4	ETC	获取价格	TRANSISTOR \| MOSFET \| ARRAY \| N-CHANNEL \| 55V V(BR)DSS \| 4.8A I(D) \| SO
BUZ103SL-4	INFINEON	获取价格	SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t